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| N-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch IT1750 FEATURES CORPORATION * Low ON Resistance * Low Cdg Gain * HighThreshold Voltage * Low PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source and Gate-Source Voltage . . . . . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . 125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TO-72 ORDERING INFORMATION Part D C G S Package Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC IT1750 XIT1750 1003 ELECTRICAL CHARACTERISTICS (TA = 25oC, Body connected to Source and VBS = 0 unless otherwise specified) SYMBOL VGS(th) IDSS IGSS BVDSS rDS(on) ID(on) Yfs Ciss Cdg PARAMETER Gate to Source Threshold Voltage Drain Leakage Current Gate Leakage Current Drain Breakdown Voltage Drain to Source on Resistance Drain Current Forward Transadmittance Total Gate Input Capacitance Gate to Drain Capacitance 10 3,000 6.0 1.6 25 50 MIN 0.50 MAX 3.0 10 (See note 2) V ohms mA S pF pF ID = 10A, VGS = 0 VGS = 20V VDS = VGS =10V VDS = 10V, ID = 10mA, f = 1kHz ID = 10mA, VDS = 10V, f = 1MHz (Note 3) VDG = 10V, f = 1MHz (Note 3) UNITS V nA TEST CONDITIONS VDS = VGS, I D = 10A VDS = 10V, VGS = 0 NOTES: 1. Devices must not be tested at 125V more than once nor longer than 300ms. 2. Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA. External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed. 3. For design reference only, not 100% tested. |
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